Prospective development in diffusion barrier layers for copper metallization in LSI

The most recent development together with some challenging opportunities on barrier layers for copper metallization has been reviewed. This review study mainly focuses on the technology trends in interconnect metallization, with emphasis on barrier layer materials, mechanism that dominates diffusion...

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Bibliographic Details
Main Authors: Wong, H.Y., Mohd Shukor, N.F., Amin, N.
Format: Article
Language:English
Published: ELSEVIER SCI LTD 2007
Subjects:
Online Access:http://shdl.mmu.edu.my/3050/
http://shdl.mmu.edu.my/3050/1/1073.pdf