Theoretical analysis of breakdown probabilities and jitter in single-photon avalanche diodes

A simple random ionization path length model is used to investigate the breakdown probabilities and jitter in single photon avalanche diodes (SPADs) with submicron multiplication widths. The simulation results show that increasing the multiplication width may not necessarily increase the breakdown p...

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Main Authors: Tan, S. L., Ong, D. S., Yow, H. K.
Format: Article
Published: AMER INST PHYSICS 2007
Subjects:
Online Access:http://shdl.mmu.edu.my/3019/
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author Tan, S. L.
Ong, D. S.
Yow, H. K.
author_facet Tan, S. L.
Ong, D. S.
Yow, H. K.
author_sort Tan, S. L.
building MMU Institutional Repository
collection Online Access
description A simple random ionization path length model is used to investigate the breakdown probabilities and jitter in single photon avalanche diodes (SPADs) with submicron multiplication widths. The simulation results show that increasing the multiplication width may not necessarily increase the breakdown probability relative to the breakdown voltage, as the effect of dead space becomes more dominant in thinner multiplication regions at realistic ionization threshold energies for GaAs. On the other hand, reducing the multiplication width results in smaller breakdown time and jitter, despite the increased dead space. The effect of dead space in degrading breakdown time and jitter is relatively weak and further compensated by the stronger influence of large feedback ionization at high fields. Thus, SPAD designs that can minimize the dark count rate may potentially benefit from enhanced breakdown probability, breakdown time, and jitter by reducing the thickness of the multiplication region. (C) 2007 American Institute of Physics.
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spelling mmu-30192011-09-29T06:24:53Z http://shdl.mmu.edu.my/3019/ Theoretical analysis of breakdown probabilities and jitter in single-photon avalanche diodes Tan, S. L. Ong, D. S. Yow, H. K. T Technology (General) QC Physics A simple random ionization path length model is used to investigate the breakdown probabilities and jitter in single photon avalanche diodes (SPADs) with submicron multiplication widths. The simulation results show that increasing the multiplication width may not necessarily increase the breakdown probability relative to the breakdown voltage, as the effect of dead space becomes more dominant in thinner multiplication regions at realistic ionization threshold energies for GaAs. On the other hand, reducing the multiplication width results in smaller breakdown time and jitter, despite the increased dead space. The effect of dead space in degrading breakdown time and jitter is relatively weak and further compensated by the stronger influence of large feedback ionization at high fields. Thus, SPAD designs that can minimize the dark count rate may potentially benefit from enhanced breakdown probability, breakdown time, and jitter by reducing the thickness of the multiplication region. (C) 2007 American Institute of Physics. AMER INST PHYSICS 2007-08 Article NonPeerReviewed Tan, S. L. and Ong, D. S. and Yow, H. K. (2007) Theoretical analysis of breakdown probabilities and jitter in single-photon avalanche diodes. Journal of Applied Physics, 102 (4). 044506. ISSN 00218979 http://dx.doi.org/10.1063/1.2772531 doi:10.1063/1.2772531 doi:10.1063/1.2772531
spellingShingle T Technology (General)
QC Physics
Tan, S. L.
Ong, D. S.
Yow, H. K.
Theoretical analysis of breakdown probabilities and jitter in single-photon avalanche diodes
title Theoretical analysis of breakdown probabilities and jitter in single-photon avalanche diodes
title_full Theoretical analysis of breakdown probabilities and jitter in single-photon avalanche diodes
title_fullStr Theoretical analysis of breakdown probabilities and jitter in single-photon avalanche diodes
title_full_unstemmed Theoretical analysis of breakdown probabilities and jitter in single-photon avalanche diodes
title_short Theoretical analysis of breakdown probabilities and jitter in single-photon avalanche diodes
title_sort theoretical analysis of breakdown probabilities and jitter in single-photon avalanche diodes
topic T Technology (General)
QC Physics
url http://shdl.mmu.edu.my/3019/
http://shdl.mmu.edu.my/3019/
http://shdl.mmu.edu.my/3019/