On the characterization of a new type of oxide-confined 850nm GaAs-based vertical-cavity surface-emitting laser

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On the characterization of a new type of oxide-confined 850nm GaAs-based vertical-cavity surface-emitting laser

Using simulation tools, results are presented for a new type of oxide-confined vertical-cavity surface-emitting laser (VCSEL) to be operated at 850 nm region of the electromagnetic spectrum. The structural details for the device are illustrated. The novelty of the device lies in that the low-doped D...

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Bibliographic Details
Main Authors:	MITANI, S, CHOUDHURY, P, ALIAS, M
Format:	Article
Published:	ELSEVIER GMBH 2008
Subjects:	T Technology (General) QA75.5-76.95 Electronic computers. Computer science
Online Access:	http://shdl.mmu.edu.my/2815/

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