On the characterization of a new type of oxide-confined 850nm GaAs-based vertical-cavity surface-emitting laser
Using simulation tools, results are presented for a new type of oxide-confined vertical-cavity surface-emitting laser (VCSEL) to be operated at 850 nm region of the electromagnetic spectrum. The structural details for the device are illustrated. The novelty of the device lies in that the low-doped D...
| Main Authors: | , , |
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| Format: | Article |
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ELSEVIER GMBH
2008
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| Subjects: | |
| Online Access: | http://shdl.mmu.edu.my/2815/ |