On the characterization of a new type of oxide-confined 850nm GaAs-based vertical-cavity surface-emitting laser
Using simulation tools, results are presented for a new type of oxide-confined vertical-cavity surface-emitting laser (VCSEL) to be operated at 850 nm region of the electromagnetic spectrum. The structural details for the device are illustrated. The novelty of the device lies in that the low-doped D...
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| Format: | Article |
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ELSEVIER GMBH
2008
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| Online Access: | http://shdl.mmu.edu.my/2815/ |
| _version_ | 1848790157254197248 |
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| author | MITANI, S CHOUDHURY, P ALIAS, M |
| author_facet | MITANI, S CHOUDHURY, P ALIAS, M |
| author_sort | MITANI, S |
| building | MMU Institutional Repository |
| collection | Online Access |
| description | Using simulation tools, results are presented for a new type of oxide-confined vertical-cavity surface-emitting laser (VCSEL) to be operated at 850 nm region of the electromagnetic spectrum. The structural details for the device are illustrated. The novelty of the device lies in that the low-doped DBR layers as well as the barrier reduction layers within the DBRs are introduced for the device fabrication, which finally provide much better efficiency of the proposed VCSEL structure. Simulations have been performed for the analyses of several features of the VCSEL that primarily govern the operational characteristics of the device. A very small deviation from the proposed structure will essentially affect the features of the output light. (C) 2007 Elsevier GmbH. All rights reserved. |
| first_indexed | 2025-11-14T18:08:09Z |
| format | Article |
| id | mmu-2815 |
| institution | Multimedia University |
| institution_category | Local University |
| last_indexed | 2025-11-14T18:08:09Z |
| publishDate | 2008 |
| publisher | ELSEVIER GMBH |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | mmu-28152011-09-19T03:45:57Z http://shdl.mmu.edu.my/2815/ On the characterization of a new type of oxide-confined 850nm GaAs-based vertical-cavity surface-emitting laser MITANI, S CHOUDHURY, P ALIAS, M T Technology (General) QA75.5-76.95 Electronic computers. Computer science Using simulation tools, results are presented for a new type of oxide-confined vertical-cavity surface-emitting laser (VCSEL) to be operated at 850 nm region of the electromagnetic spectrum. The structural details for the device are illustrated. The novelty of the device lies in that the low-doped DBR layers as well as the barrier reduction layers within the DBRs are introduced for the device fabrication, which finally provide much better efficiency of the proposed VCSEL structure. Simulations have been performed for the analyses of several features of the VCSEL that primarily govern the operational characteristics of the device. A very small deviation from the proposed structure will essentially affect the features of the output light. (C) 2007 Elsevier GmbH. All rights reserved. ELSEVIER GMBH 2008 Article NonPeerReviewed MITANI, S and CHOUDHURY, P and ALIAS, M (2008) On the characterization of a new type of oxide-confined 850nm GaAs-based vertical-cavity surface-emitting laser. Optik - International Journal for Light and Electron Optics, 119 (8). pp. 373-378. ISSN 00304026 http://dx.doi.org/10.1016/j.ijleo.2006.12.007 doi:10.1016/j.ijleo.2006.12.007 doi:10.1016/j.ijleo.2006.12.007 |
| spellingShingle | T Technology (General) QA75.5-76.95 Electronic computers. Computer science MITANI, S CHOUDHURY, P ALIAS, M On the characterization of a new type of oxide-confined 850nm GaAs-based vertical-cavity surface-emitting laser |
| title | On the characterization of a new type of oxide-confined 850nm GaAs-based vertical-cavity surface-emitting laser |
| title_full | On the characterization of a new type of oxide-confined 850nm GaAs-based vertical-cavity surface-emitting laser |
| title_fullStr | On the characterization of a new type of oxide-confined 850nm GaAs-based vertical-cavity surface-emitting laser |
| title_full_unstemmed | On the characterization of a new type of oxide-confined 850nm GaAs-based vertical-cavity surface-emitting laser |
| title_short | On the characterization of a new type of oxide-confined 850nm GaAs-based vertical-cavity surface-emitting laser |
| title_sort | on the characterization of a new type of oxide-confined 850nm gaas-based vertical-cavity surface-emitting laser |
| topic | T Technology (General) QA75.5-76.95 Electronic computers. Computer science |
| url | http://shdl.mmu.edu.my/2815/ http://shdl.mmu.edu.my/2815/ http://shdl.mmu.edu.my/2815/ |