Effect of doping concentration on avalanche multiplication and excess noise factor in submicron APD

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Effect of doping concentration on avalanche multiplication and excess noise factor in submicron APD

A realistic full-band Monte Carlo (FBMC) model is applied to study the effect of doping concentration on multiplication gain and excess noise factor for electron- and hole-initiated multiplication ill thin InP p(+)-i-n(+) diodes with a range of multiplication lengths of w = 0.1 and 0.24 mu m. This m...

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Bibliographic Details
Main Authors:	YOU, A, CHEANG, P
Format:	Article
Language:	English
Published:	PERGAMON-ELSEVIER SCIENCE LTD 2008
Subjects:	T Technology (General) QA75.5-76.95 Electronic computers. Computer science
Online Access:	http://shdl.mmu.edu.my/2752/ http://shdl.mmu.edu.my/2752/1/792.pdf

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