Effect of doping concentration on avalanche multiplication and excess noise factor in submicron APD
A realistic full-band Monte Carlo (FBMC) model is applied to study the effect of doping concentration on multiplication gain and excess noise factor for electron- and hole-initiated multiplication ill thin InP p(+)-i-n(+) diodes with a range of multiplication lengths of w = 0.1 and 0.24 mu m. This m...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
PERGAMON-ELSEVIER SCIENCE LTD
2008
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| Subjects: | |
| Online Access: | http://shdl.mmu.edu.my/2752/ http://shdl.mmu.edu.my/2752/1/792.pdf |