Effect of doping concentration on avalanche multiplication and excess noise factor in submicron APD
A realistic full-band Monte Carlo (FBMC) model is applied to study the effect of doping concentration on multiplication gain and excess noise factor for electron- and hole-initiated multiplication ill thin InP p(+)-i-n(+) diodes with a range of multiplication lengths of w = 0.1 and 0.24 mu m. This m...
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| Format: | Article |
| Language: | English |
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PERGAMON-ELSEVIER SCIENCE LTD
2008
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| Online Access: | http://shdl.mmu.edu.my/2752/ http://shdl.mmu.edu.my/2752/1/792.pdf |
| _version_ | 1848790140041822208 |
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| author | YOU, A CHEANG, P |
| author_facet | YOU, A CHEANG, P |
| author_sort | YOU, A |
| building | MMU Institutional Repository |
| collection | Online Access |
| description | A realistic full-band Monte Carlo (FBMC) model is applied to study the effect of doping concentration on multiplication gain and excess noise factor for electron- and hole-initiated multiplication ill thin InP p(+)-i-n(+) diodes with a range of multiplication lengths of w = 0.1 and 0.24 mu m. This model predicts a reduction in excess noise factor for both electron- and hole-initiated multiplication as the doping concentration increases. Besides dead-space effect and feedback impact ionization, the electric field profile controlled by the doping concentration significantly contributes to the fall of excess noise in submicron InP p(+)-i-n(+) diodes. (c) 2007 Elsevier Ltd. All rights reserved. |
| first_indexed | 2025-11-14T18:07:52Z |
| format | Article |
| id | mmu-2752 |
| institution | Multimedia University |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-14T18:07:52Z |
| publishDate | 2008 |
| publisher | PERGAMON-ELSEVIER SCIENCE LTD |
| recordtype | eprints |
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| spelling | mmu-27522014-02-13T07:48:13Z http://shdl.mmu.edu.my/2752/ Effect of doping concentration on avalanche multiplication and excess noise factor in submicron APD YOU, A CHEANG, P T Technology (General) QA75.5-76.95 Electronic computers. Computer science A realistic full-band Monte Carlo (FBMC) model is applied to study the effect of doping concentration on multiplication gain and excess noise factor for electron- and hole-initiated multiplication ill thin InP p(+)-i-n(+) diodes with a range of multiplication lengths of w = 0.1 and 0.24 mu m. This model predicts a reduction in excess noise factor for both electron- and hole-initiated multiplication as the doping concentration increases. Besides dead-space effect and feedback impact ionization, the electric field profile controlled by the doping concentration significantly contributes to the fall of excess noise in submicron InP p(+)-i-n(+) diodes. (c) 2007 Elsevier Ltd. All rights reserved. PERGAMON-ELSEVIER SCIENCE LTD 2008-04 Article NonPeerReviewed text en http://shdl.mmu.edu.my/2752/1/792.pdf YOU, A and CHEANG, P (2008) Effect of doping concentration on avalanche multiplication and excess noise factor in submicron APD. Microelectronics Reliability, 48 (4). pp. 547-554. ISSN 00262714 http://dx.doi.org/10.1016/j.microrel.2007.10.006 doi:10.1016/j.microrel.2007.10.006 doi:10.1016/j.microrel.2007.10.006 |
| spellingShingle | T Technology (General) QA75.5-76.95 Electronic computers. Computer science YOU, A CHEANG, P Effect of doping concentration on avalanche multiplication and excess noise factor in submicron APD |
| title | Effect of doping concentration on avalanche multiplication and excess noise factor in submicron APD |
| title_full | Effect of doping concentration on avalanche multiplication and excess noise factor in submicron APD |
| title_fullStr | Effect of doping concentration on avalanche multiplication and excess noise factor in submicron APD |
| title_full_unstemmed | Effect of doping concentration on avalanche multiplication and excess noise factor in submicron APD |
| title_short | Effect of doping concentration on avalanche multiplication and excess noise factor in submicron APD |
| title_sort | effect of doping concentration on avalanche multiplication and excess noise factor in submicron apd |
| topic | T Technology (General) QA75.5-76.95 Electronic computers. Computer science |
| url | http://shdl.mmu.edu.my/2752/ http://shdl.mmu.edu.my/2752/ http://shdl.mmu.edu.my/2752/ http://shdl.mmu.edu.my/2752/1/792.pdf |