An analytical study of hot-carrier degradation effects in sub-micron MOS devices

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An analytical study of hot-carrier degradation effects in sub-micron MOS devices

In this present communication, we have studied the effect of hot-carrier degradation effects on surface potential, threshold voltage and DIBL of the sub-micron device. We have derived a more accurate model for the threshold voltage in the presence of hot carrier degradation effect. Our model include...

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Bibliographic Details
Main Author:	Singh, A. K.
Format:	Article
Published:	EDP SCIENCES S A 2008
Subjects:	T Technology (General) QC Physics
Online Access:	http://shdl.mmu.edu.my/2742/

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