An analytical study of hot-carrier degradation effects in sub-micron MOS devices
In this present communication, we have studied the effect of hot-carrier degradation effects on surface potential, threshold voltage and DIBL of the sub-micron device. We have derived a more accurate model for the threshold voltage in the presence of hot carrier degradation effect. Our model include...
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| Format: | Article |
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EDP SCIENCES S A
2008
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| Online Access: | http://shdl.mmu.edu.my/2742/ |