Growth and characterisation of GaxIn1-xSb thin films for infrared detectors

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Growth and characterisation of GaxIn1-xSb thin films for infrared detectors

Growth of GaxIn1-xSb (x = 0.1 to 0.5) thin films was carried out using hot wall epitaxy system on high purity quartz glasses and high resistive silicon as substrates. The source material for the growth of film was grown in the laboratory using vertical Bridgmen method in microprocessor controlled hi...

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Bibliographic Details
Main Author:	Barman, , PB
Format:	Article
Published:	2002
Subjects:	QD Chemistry
Online Access:	http://shdl.mmu.edu.my/2635/

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