Growth and characterisation of GaxIn1-xSb thin films for infrared detectors
Growth of GaxIn1-xSb (x = 0.1 to 0.5) thin films was carried out using hot wall epitaxy system on high purity quartz glasses and high resistive silicon as substrates. The source material for the growth of film was grown in the laboratory using vertical Bridgmen method in microprocessor controlled hi...
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| Format: | Article |
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2002
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| Online Access: | http://shdl.mmu.edu.my/2635/ |