Polysilicon Encapsulation Gettering with Electric-Field-Enhanced Isothermal Annealing for Copper Impurities in Bulk Silicon

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Polysilicon Encapsulation Gettering with Electric-Field-Enhanced Isothermal Annealing for Copper Impurities in Bulk Silicon

A metal gettering strategy for copper in silicon, combining polysilicon encapsulation, isothermal annealing, and an external dc electric field is proposed. Experimental results have shown faster gettering of copper at the polysilicon layer to a higher concentration level above the copper detection l...

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Bibliographic Details
Main Authors:	Lee, W. P., Teh, E. P., Yow, H. K., Choong, C. L., Tou, T. Y.
Format:	Article
Published:	2004
Subjects:	Q Science (General)
Online Access:	http://shdl.mmu.edu.my/2494/

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