Polysilicon Encapsulation Gettering with Electric-Field-Enhanced Isothermal Annealing for Copper Impurities in Bulk Silicon
A metal gettering strategy for copper in silicon, combining polysilicon encapsulation, isothermal annealing, and an external dc electric field is proposed. Experimental results have shown faster gettering of copper at the polysilicon layer to a higher concentration level above the copper detection l...
| Main Authors: | , , , , |
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| Format: | Article |
| Published: |
2004
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| Subjects: | |
| Online Access: | http://shdl.mmu.edu.my/2494/ |