Detection of Kite-Shaped COPs in Nitrogen-Doped Czochralski-Grown Silicon Wafers

Surface analyses by atomic force microscopy and field-emission scanning electron microscopy have revealed new shape of truncated voids, commonly known as crystal-originated-particles (COPs), that appear as kite-shaped pits with two (111) planes and two non-(111) planes in twin and triplet clusters,...

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Main Authors: Lee, W. P., Yow, H. K., Tou, T. Y.
Format: Article
Published: 2004
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Online Access:http://shdl.mmu.edu.my/2493/
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author Lee, W. P.
Yow, H. K.
Tou, T. Y.
author_facet Lee, W. P.
Yow, H. K.
Tou, T. Y.
author_sort Lee, W. P.
building MMU Institutional Repository
collection Online Access
description Surface analyses by atomic force microscopy and field-emission scanning electron microscopy have revealed new shape of truncated voids, commonly known as crystal-originated-particles (COPs), that appear as kite-shaped pits with two (111) planes and two non-(111) planes in twin and triplet clusters, when viewed from the surface plane of nitrogen-doped Czochralski (CZ)-grown silicon (100) wafers. Also, the detection of higher number density but smaller size for these COPs indicates that the presence of nitrogen during CZ-growth of silicon crystals has strong influence on the size and density of COPs. (C) 2004 The Electrochemical Society.
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spelling mmu-24932011-08-22T02:28:13Z http://shdl.mmu.edu.my/2493/ Detection of Kite-Shaped COPs in Nitrogen-Doped Czochralski-Grown Silicon Wafers Lee, W. P. Yow, H. K. Tou, T. Y. Q Science (General) Surface analyses by atomic force microscopy and field-emission scanning electron microscopy have revealed new shape of truncated voids, commonly known as crystal-originated-particles (COPs), that appear as kite-shaped pits with two (111) planes and two non-(111) planes in twin and triplet clusters, when viewed from the surface plane of nitrogen-doped Czochralski (CZ)-grown silicon (100) wafers. Also, the detection of higher number density but smaller size for these COPs indicates that the presence of nitrogen during CZ-growth of silicon crystals has strong influence on the size and density of COPs. (C) 2004 The Electrochemical Society. 2004 Article NonPeerReviewed Lee, W. P. and Yow, H. K. and Tou, T. Y. (2004) Detection of Kite-Shaped COPs in Nitrogen-Doped Czochralski-Grown Silicon Wafers. Electrochemical and Solid-State Letters, 7 (11). G282-G285. ISSN 10990062 http://dx.doi.org/10.1149/1.1808093 doi:10.1149/1.1808093 doi:10.1149/1.1808093
spellingShingle Q Science (General)
Lee, W. P.
Yow, H. K.
Tou, T. Y.
Detection of Kite-Shaped COPs in Nitrogen-Doped Czochralski-Grown Silicon Wafers
title Detection of Kite-Shaped COPs in Nitrogen-Doped Czochralski-Grown Silicon Wafers
title_full Detection of Kite-Shaped COPs in Nitrogen-Doped Czochralski-Grown Silicon Wafers
title_fullStr Detection of Kite-Shaped COPs in Nitrogen-Doped Czochralski-Grown Silicon Wafers
title_full_unstemmed Detection of Kite-Shaped COPs in Nitrogen-Doped Czochralski-Grown Silicon Wafers
title_short Detection of Kite-Shaped COPs in Nitrogen-Doped Czochralski-Grown Silicon Wafers
title_sort detection of kite-shaped cops in nitrogen-doped czochralski-grown silicon wafers
topic Q Science (General)
url http://shdl.mmu.edu.my/2493/
http://shdl.mmu.edu.my/2493/
http://shdl.mmu.edu.my/2493/