Detection of Kite-Shaped COPs in Nitrogen-Doped Czochralski-Grown Silicon Wafers
Surface analyses by atomic force microscopy and field-emission scanning electron microscopy have revealed new shape of truncated voids, commonly known as crystal-originated-particles (COPs), that appear as kite-shaped pits with two (111) planes and two non-(111) planes in twin and triplet clusters,...
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| Format: | Article |
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2004
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| Online Access: | http://shdl.mmu.edu.my/2493/ |
| Summary: | Surface analyses by atomic force microscopy and field-emission scanning electron microscopy have revealed new shape of truncated voids, commonly known as crystal-originated-particles (COPs), that appear as kite-shaped pits with two (111) planes and two non-(111) planes in twin and triplet clusters, when viewed from the surface plane of nitrogen-doped Czochralski (CZ)-grown silicon (100) wafers. Also, the detection of higher number density but smaller size for these COPs indicates that the presence of nitrogen during CZ-growth of silicon crystals has strong influence on the size and density of COPs. (C) 2004 The Electrochemical Society. |
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