The applicability of analytical-band Monte Carlo for modelling high field electron transport in GaAs
An analytical-band Monte Carlo model incorporating four non-parabolic spherical valleys to represent the first two conduction bands has been developed to model hot electron transport and impact ionization in GaAs. We have tested the performance of this simple model against full-band Monte Carlo simu...
| Main Authors: | , |
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| Format: | Article |
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2004
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| Online Access: | http://shdl.mmu.edu.my/2457/ |
| _version_ | 1848790059765989376 |
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| author | Choo, K Y Ong, D S |
| author_facet | Choo, K Y Ong, D S |
| author_sort | Choo, K Y |
| building | MMU Institutional Repository |
| collection | Online Access |
| description | An analytical-band Monte Carlo model incorporating four non-parabolic spherical valleys to represent the first two conduction bands has been developed to model hot electron transport and impact ionization in GaAs. We have tested the performance of this simple model against full-band Monte Carlo simulations for calculating the probability distribution function of impact ionization path length, time and energy; and transient velocity overshoot at high fields. This simpler model is: found capable of reproducing the full-band model results satisfactorily but at much lower computational cost. |
| first_indexed | 2025-11-14T18:06:36Z |
| format | Article |
| id | mmu-2457 |
| institution | Multimedia University |
| institution_category | Local University |
| last_indexed | 2025-11-14T18:06:36Z |
| publishDate | 2004 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | mmu-24572011-08-19T01:36:48Z http://shdl.mmu.edu.my/2457/ The applicability of analytical-band Monte Carlo for modelling high field electron transport in GaAs Choo, K Y Ong, D S TA Engineering (General). Civil engineering (General) An analytical-band Monte Carlo model incorporating four non-parabolic spherical valleys to represent the first two conduction bands has been developed to model hot electron transport and impact ionization in GaAs. We have tested the performance of this simple model against full-band Monte Carlo simulations for calculating the probability distribution function of impact ionization path length, time and energy; and transient velocity overshoot at high fields. This simpler model is: found capable of reproducing the full-band model results satisfactorily but at much lower computational cost. 2004-08 Article NonPeerReviewed Choo, K Y and Ong, D S (2004) The applicability of analytical-band Monte Carlo for modelling high field electron transport in GaAs. Semiconductor Science and Technology, 19 (8). pp. 1067-1073. ISSN 0268-1242 http://dx.doi.org/10.1088/0268-1242/19/8/019 doi:10.1088/0268-1242/19/8/019 doi:10.1088/0268-1242/19/8/019 |
| spellingShingle | TA Engineering (General). Civil engineering (General) Choo, K Y Ong, D S The applicability of analytical-band Monte Carlo for modelling high field electron transport in GaAs |
| title | The applicability of analytical-band Monte Carlo for modelling high field electron transport in GaAs |
| title_full | The applicability of analytical-band Monte Carlo for modelling high field electron transport in GaAs |
| title_fullStr | The applicability of analytical-band Monte Carlo for modelling high field electron transport in GaAs |
| title_full_unstemmed | The applicability of analytical-band Monte Carlo for modelling high field electron transport in GaAs |
| title_short | The applicability of analytical-band Monte Carlo for modelling high field electron transport in GaAs |
| title_sort | applicability of analytical-band monte carlo for modelling high field electron transport in gaas |
| topic | TA Engineering (General). Civil engineering (General) |
| url | http://shdl.mmu.edu.my/2457/ http://shdl.mmu.edu.my/2457/ http://shdl.mmu.edu.my/2457/ |