Random response time of thin avalanche photodiodes
The avalanche built-up time using random response time model for avalanche photodiode (APD) is presented. A random response time model considers the randomness of times at which the primary and secondary carriers exit the multiplication region. The dead-space effect is included in our model to demon...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
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2004
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| Online Access: | http://shdl.mmu.edu.my/2437/ http://shdl.mmu.edu.my/2437/1/1709.pdf |
| _version_ | 1848790056153645056 |
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| author | You, A. H. Ong, D. S. |
| author_facet | You, A. H. Ong, D. S. |
| author_sort | You, A. H. |
| building | MMU Institutional Repository |
| collection | Online Access |
| description | The avalanche built-up time using random response time model for avalanche photodiode (APD) is presented. A random response time model considers the randomness of times at which the primary and secondary carriers exit the multiplication region. The dead-space effect is included in our model to demonstrate its effect on response time of APDs especially for the thin devices. Our results show that feedback impact ionisation process and dead-space prolong the response time in APDs. The time response of homojunction InP p(+)-i-n(+) diodes with the multiplication region of 0.281, 0.582 and 1.243 mum are calculated. |
| first_indexed | 2025-11-14T18:06:32Z |
| format | Article |
| id | mmu-2437 |
| institution | Multimedia University |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-14T18:06:32Z |
| publishDate | 2004 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | mmu-24372011-08-22T02:02:30Z http://shdl.mmu.edu.my/2437/ Random response time of thin avalanche photodiodes You, A. H. Ong, D. S. TA Engineering (General). Civil engineering (General) The avalanche built-up time using random response time model for avalanche photodiode (APD) is presented. A random response time model considers the randomness of times at which the primary and secondary carriers exit the multiplication region. The dead-space effect is included in our model to demonstrate its effect on response time of APDs especially for the thin devices. Our results show that feedback impact ionisation process and dead-space prolong the response time in APDs. The time response of homojunction InP p(+)-i-n(+) diodes with the multiplication region of 0.281, 0.582 and 1.243 mum are calculated. 2004-10 Article NonPeerReviewed application/pdf en http://shdl.mmu.edu.my/2437/1/1709.pdf You, A. H. and Ong, D. S. (2004) Random response time of thin avalanche photodiodes. Optical and Quantum Electronics, 36 (13). pp. 1155-1166. ISSN 0306-8919 http://dx.doi.org/10.1007/s11082-004-4626-7 doi:10.1007/s11082-004-4626-7 doi:10.1007/s11082-004-4626-7 |
| spellingShingle | TA Engineering (General). Civil engineering (General) You, A. H. Ong, D. S. Random response time of thin avalanche photodiodes |
| title | Random response time of thin avalanche photodiodes |
| title_full | Random response time of thin avalanche photodiodes |
| title_fullStr | Random response time of thin avalanche photodiodes |
| title_full_unstemmed | Random response time of thin avalanche photodiodes |
| title_short | Random response time of thin avalanche photodiodes |
| title_sort | random response time of thin avalanche photodiodes |
| topic | TA Engineering (General). Civil engineering (General) |
| url | http://shdl.mmu.edu.my/2437/ http://shdl.mmu.edu.my/2437/ http://shdl.mmu.edu.my/2437/ http://shdl.mmu.edu.my/2437/1/1709.pdf |