Avalanche Multiplication and Noise Characteristics of Thin InP p+–i–n+Diodes
A simple random path length model for computing the statistics of avalanche gain and excess noise factor in thin InP p(+)-i-n(+) diodes is presented. We incorporate the dead-space effect in our model, which is expected to play an important role in reducing noise in homejunction InP avalanche photodi...
| Main Authors: | , |
|---|---|
| Format: | Article |
| Published: |
2004
|
| Subjects: | |
| Online Access: | http://shdl.mmu.edu.my/2430/ |
| _version_ | 1848790054114164736 |
|---|---|
| author | You, Ah Heng Ong, Duu Sheng |
| author_facet | You, Ah Heng Ong, Duu Sheng |
| author_sort | You, Ah Heng |
| building | MMU Institutional Repository |
| collection | Online Access |
| description | A simple random path length model for computing the statistics of avalanche gain and excess noise factor in thin InP p(+)-i-n(+) diodes is presented. We incorporate the dead-space effect in our model, which is expected to play an important role in reducing noise in homejunction InP avalanche photodiodes (APDs). It is shown that the dead-space effect reduces avalanche noise when the device length is small. Our model is able to simulate the characteristics of multiplication gain and noise including the dead-space effect in InP p+-i-n+ diodes, particularly at device lengths omega of 0.1 mum and 0.2 mum. We demonstrated that the dead-space effect and feedback impact ionization are the dominant effects for improving excess noise factor in thin InP APDs. |
| first_indexed | 2025-11-14T18:06:30Z |
| format | Article |
| id | mmu-2430 |
| institution | Multimedia University |
| institution_category | Local University |
| last_indexed | 2025-11-14T18:06:30Z |
| publishDate | 2004 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | mmu-24302011-08-22T02:07:59Z http://shdl.mmu.edu.my/2430/ Avalanche Multiplication and Noise Characteristics of Thin InP p+–i–n+Diodes You, Ah Heng Ong, Duu Sheng QC Physics A simple random path length model for computing the statistics of avalanche gain and excess noise factor in thin InP p(+)-i-n(+) diodes is presented. We incorporate the dead-space effect in our model, which is expected to play an important role in reducing noise in homejunction InP avalanche photodiodes (APDs). It is shown that the dead-space effect reduces avalanche noise when the device length is small. Our model is able to simulate the characteristics of multiplication gain and noise including the dead-space effect in InP p+-i-n+ diodes, particularly at device lengths omega of 0.1 mum and 0.2 mum. We demonstrated that the dead-space effect and feedback impact ionization are the dominant effects for improving excess noise factor in thin InP APDs. 2004-11 Article NonPeerReviewed You, Ah Heng and Ong, Duu Sheng (2004) Avalanche Multiplication and Noise Characteristics of Thin InP p+–i–n+Diodes. Japanese Journal of Applied Physics, 43 (11A). pp. 7399-7404. ISSN 0021-4922 http://dx.doi.org/10.1143/JJAP.43.7399 doi:10.1143/JJAP.43.7399 doi:10.1143/JJAP.43.7399 |
| spellingShingle | QC Physics You, Ah Heng Ong, Duu Sheng Avalanche Multiplication and Noise Characteristics of Thin InP p+–i–n+Diodes |
| title | Avalanche Multiplication and Noise Characteristics of Thin InP p+–i–n+Diodes |
| title_full | Avalanche Multiplication and Noise Characteristics of Thin InP p+–i–n+Diodes |
| title_fullStr | Avalanche Multiplication and Noise Characteristics of Thin InP p+–i–n+Diodes |
| title_full_unstemmed | Avalanche Multiplication and Noise Characteristics of Thin InP p+–i–n+Diodes |
| title_short | Avalanche Multiplication and Noise Characteristics of Thin InP p+–i–n+Diodes |
| title_sort | avalanche multiplication and noise characteristics of thin inp p+–i–n+diodes |
| topic | QC Physics |
| url | http://shdl.mmu.edu.my/2430/ http://shdl.mmu.edu.my/2430/ http://shdl.mmu.edu.my/2430/ |