Low field operation of hot electron light emitting devices: quasi-flat-band model

Several novel laterally biased HELLISH (hot electron light emission and lasing in semiconductor heterostructure) devices have previously been reported and demonstrated. These light emitting devices are normally operated at high applied fields to heat carriers to a point where they can transfer into...

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Main Authors: Wah, J.Y., Balkan, N.
Format: Article
Language:English
Published: 2004
Subjects:
Online Access:http://shdl.mmu.edu.my/2421/
http://shdl.mmu.edu.my/2421/1/1693.pdf
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author Wah, J.Y.
Balkan, N.
author_facet Wah, J.Y.
Balkan, N.
author_sort Wah, J.Y.
building MMU Institutional Repository
collection Online Access
description Several novel laterally biased HELLISH (hot electron light emission and lasing in semiconductor heterostructure) devices have previously been reported and demonstrated. These light emitting devices are normally operated at high applied fields to heat carriers to a point where they can transfer into the quantum well via tunnelling or thermionic emission. However, it has been observed that, in most devices, light emission occurs at relatively low applied fields. In this region, the fields are too low for significant heating of carriers. Therefore, the mechanism for light emission in this region cannot be explained by hot electron effects. The results illustrating the low field operation of HELLISH devices are presented together with a quasi-flat-band model.
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spelling mmu-24212011-08-22T02:45:21Z http://shdl.mmu.edu.my/2421/ Low field operation of hot electron light emitting devices: quasi-flat-band model Wah, J.Y. Balkan, N. TA Engineering (General). Civil engineering (General) Several novel laterally biased HELLISH (hot electron light emission and lasing in semiconductor heterostructure) devices have previously been reported and demonstrated. These light emitting devices are normally operated at high applied fields to heat carriers to a point where they can transfer into the quantum well via tunnelling or thermionic emission. However, it has been observed that, in most devices, light emission occurs at relatively low applied fields. In this region, the fields are too low for significant heating of carriers. Therefore, the mechanism for light emission in this region cannot be explained by hot electron effects. The results illustrating the low field operation of HELLISH devices are presented together with a quasi-flat-band model. 2004-12 Article NonPeerReviewed application/pdf en http://shdl.mmu.edu.my/2421/1/1693.pdf Wah, J.Y. and Balkan, N. (2004) Low field operation of hot electron light emitting devices: quasi-flat-band model. IEE Proceedings - Optoelectronics, 151 (6). pp. 482-485. ISSN 13502433 http://dx.doi.org/10.1049/ip-opt:20040783 doi:10.1049/ip-opt:20040783 doi:10.1049/ip-opt:20040783
spellingShingle TA Engineering (General). Civil engineering (General)
Wah, J.Y.
Balkan, N.
Low field operation of hot electron light emitting devices: quasi-flat-band model
title Low field operation of hot electron light emitting devices: quasi-flat-band model
title_full Low field operation of hot electron light emitting devices: quasi-flat-band model
title_fullStr Low field operation of hot electron light emitting devices: quasi-flat-band model
title_full_unstemmed Low field operation of hot electron light emitting devices: quasi-flat-band model
title_short Low field operation of hot electron light emitting devices: quasi-flat-band model
title_sort low field operation of hot electron light emitting devices: quasi-flat-band model
topic TA Engineering (General). Civil engineering (General)
url http://shdl.mmu.edu.my/2421/
http://shdl.mmu.edu.my/2421/
http://shdl.mmu.edu.my/2421/
http://shdl.mmu.edu.my/2421/1/1693.pdf