Low field operation of hot electron light emitting devices: quasi-flat-band model
Several novel laterally biased HELLISH (hot electron light emission and lasing in semiconductor heterostructure) devices have previously been reported and demonstrated. These light emitting devices are normally operated at high applied fields to heat carriers to a point where they can transfer into...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
2004
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| Subjects: | |
| Online Access: | http://shdl.mmu.edu.my/2421/ http://shdl.mmu.edu.my/2421/1/1693.pdf |