Enhanced gettering of iron impurities in bulk silicon by using external direct current electric field

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Enhanced gettering of iron impurities in bulk silicon by using external direct current electric field

Iron impurities in bulk silicon are found to getter efficiently at the polysilicon layer by an electric field during isothermal annealing. Experimental results show that iron concentration at the polysilicon layer increases to the level that becomes detectable by total reflection x-ray fluorescence...

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Bibliographic Details
Main Authors:	Lee, W. P., Teh, E. P., Yow, H. K., Choong, C. L., Tou, T. Y.
Format:	Article
Language:	English
Published:	2005
Subjects:	TA Engineering (General). Civil engineering (General)
Online Access:	http://shdl.mmu.edu.my/2212/ http://shdl.mmu.edu.my/2212/1/1525.pdf

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