Enhanced gettering of iron impurities in bulk silicon by using external direct current electric field
Iron impurities in bulk silicon are found to getter efficiently at the polysilicon layer by an electric field during isothermal annealing. Experimental results show that iron concentration at the polysilicon layer increases to the level that becomes detectable by total reflection x-ray fluorescence...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
2005
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| Subjects: | |
| Online Access: | http://shdl.mmu.edu.my/2212/ http://shdl.mmu.edu.my/2212/1/1525.pdf |