Positive and negative temperature dependences of electron-impact ionization in In[sub 0.53]Ga[sub 0.47]As

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Positive and negative temperature dependences of electron-impact ionization in In[sub 0.53]Ga[sub 0.47]As

The electron-impact ionization coefficient (alpha) in In0.53Ga0.47As increases with temperature at electric fields below 200 kV/cm, in contrast to most crystalline semiconductors. It exhibits conventional negative temperature dependence at higher fields. A four-valley analytical band Monte Carlo mod...

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Bibliographic Details
Main Authors:	Choo, K. Y., Ong, D. S.
Format:	Article
Published:	2005
Subjects:	QC Physics
Online Access:	http://shdl.mmu.edu.my/2205/

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