Positive and negative temperature dependences of electron-impact ionization in In[sub 0.53]Ga[sub 0.47]As
The electron-impact ionization coefficient (alpha) in In0.53Ga0.47As increases with temperature at electric fields below 200 kV/cm, in contrast to most crystalline semiconductors. It exhibits conventional negative temperature dependence at higher fields. A four-valley analytical band Monte Carlo mod...
| Main Authors: | , |
|---|---|
| Format: | Article |
| Published: |
2005
|
| Subjects: | |
| Online Access: | http://shdl.mmu.edu.my/2205/ |