Strain relaxation due to V-pit formation in In[sub x]Ga[sub 1−x]N∕GaN epilayers grown on sapphire

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Strain relaxation due to V-pit formation in In[sub x]Ga[sub 1−x]N∕GaN epilayers grown on sapphire

Strain relaxation in semiconductor heterostructures generally occurs through the motion of dislocations that generates misfit dislocations above a critical thickness. However, majority of the threading dislocations in GaN-related materials have no driving force to glide, and those with a driving for...

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Bibliographic Details
Main Author:	Song, T. L.
Format:	Article
Published:	2005
Subjects:	QC Physics
Online Access:	http://shdl.mmu.edu.my/2177/

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