Strain relaxation due to V-pit formation in In[sub x]Ga[sub 1−x]N∕GaN epilayers grown on sapphire
Strain relaxation in semiconductor heterostructures generally occurs through the motion of dislocations that generates misfit dislocations above a critical thickness. However, majority of the threading dislocations in GaN-related materials have no driving force to glide, and those with a driving for...
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| Format: | Article |
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2005
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| Online Access: | http://shdl.mmu.edu.my/2177/ |