Erratum: “Strain relaxation due to V-pit formation in In[sub x]Ga[sub 1−x]N∕GaN epilayers grown on sapphire” [J. Appl. Phys. 98, 084906 (2005)]
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| Format: | Article |
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2006
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| Online Access: | http://shdl.mmu.edu.my/2010/ |
| _version_ | 1848789938703695872 |
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| author | Song, T. L. Chua, S. J. Fitzgerald, E. A. |
| author_facet | Song, T. L. Chua, S. J. Fitzgerald, E. A. |
| author_sort | Song, T. L. |
| building | MMU Institutional Repository |
| collection | Online Access |
| first_indexed | 2025-11-14T18:04:40Z |
| format | Article |
| id | mmu-2010 |
| institution | Multimedia University |
| institution_category | Local University |
| last_indexed | 2025-11-14T18:04:40Z |
| publishDate | 2006 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | mmu-20102011-08-10T07:30:31Z http://shdl.mmu.edu.my/2010/ Erratum: “Strain relaxation due to V-pit formation in In[sub x]Ga[sub 1−x]N∕GaN epilayers grown on sapphire” [J. Appl. Phys. 98, 084906 (2005)] Song, T. L. Chua, S. J. Fitzgerald, E. A. QC Physics 2006-02 Article NonPeerReviewed Song, T. L. and Chua, S. J. and Fitzgerald, E. A. (2006) Erratum: “Strain relaxation due to V-pit formation in In[sub x]Ga[sub 1−x]N∕GaN epilayers grown on sapphire” [J. Appl. Phys. 98, 084906 (2005)]. Journal of Applied Physics, 99 (3). 039901. ISSN 00218979 http://dx.doi.org/10.1063/1.2168511 doi:10.1063/1.2168511 doi:10.1063/1.2168511 |
| spellingShingle | QC Physics Song, T. L. Chua, S. J. Fitzgerald, E. A. Erratum: “Strain relaxation due to V-pit formation in In[sub x]Ga[sub 1−x]N∕GaN epilayers grown on sapphire” [J. Appl. Phys. 98, 084906 (2005)] |
| title | Erratum: “Strain relaxation due to V-pit formation in In[sub x]Ga[sub 1−x]N∕GaN epilayers grown on sapphire” [J. Appl. Phys. 98, 084906 (2005)] |
| title_full | Erratum: “Strain relaxation due to V-pit formation in In[sub x]Ga[sub 1−x]N∕GaN epilayers grown on sapphire” [J. Appl. Phys. 98, 084906 (2005)] |
| title_fullStr | Erratum: “Strain relaxation due to V-pit formation in In[sub x]Ga[sub 1−x]N∕GaN epilayers grown on sapphire” [J. Appl. Phys. 98, 084906 (2005)] |
| title_full_unstemmed | Erratum: “Strain relaxation due to V-pit formation in In[sub x]Ga[sub 1−x]N∕GaN epilayers grown on sapphire” [J. Appl. Phys. 98, 084906 (2005)] |
| title_short | Erratum: “Strain relaxation due to V-pit formation in In[sub x]Ga[sub 1−x]N∕GaN epilayers grown on sapphire” [J. Appl. Phys. 98, 084906 (2005)] |
| title_sort | erratum: “strain relaxation due to v-pit formation in in[sub x]ga[sub 1−x]n∕gan epilayers grown on sapphire” [j. appl. phys. 98, 084906 (2005)] |
| topic | QC Physics |
| url | http://shdl.mmu.edu.my/2010/ http://shdl.mmu.edu.my/2010/ http://shdl.mmu.edu.my/2010/ |