Erratum: “Strain relaxation due to V-pit formation in In[sub x]Ga[sub 1−x]N∕GaN epilayers grown on sapphire” [J. Appl. Phys. 98, 084906 (2005)]

Erratum: “Strain relaxation due to V-pit formation in In[sub x]Ga[sub 1−x]N∕GaN epilayers grown on sapphire” [J. Appl. Phys. 98, 084906 (2005)]

Bibliographic Details
Main Authors: Song, T. L., Chua, S. J., Fitzgerald, E. A.
Format: Article
Published: 2006
Subjects:
QC Physics
Online Access:http://shdl.mmu.edu.my/2010/

Internet

http://shdl.mmu.edu.my/2010/

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