APA (7th ed.) Citation

Song, T. L., Chua, S. J., & Fitzgerald, E. A. (2006). Erratum: “Strain relaxation due to V-pit formation in In[sub x]Ga[sub 1−x]N∕GaN epilayers grown on sapphire” [J. Appl. Phys. 98, 084906 (2005)].

Chicago Style (17th ed.) Citation

Song, T. L., S. J. Chua, and E. A. Fitzgerald. Erratum: “Strain Relaxation Due to V-pit Formation in In[sub X]Ga[sub 1−x]N∕GaN Epilayers Grown on Sapphire” [J. Appl. Phys. 98, 084906 (2005)]. 2006.

MLA (9th ed.) Citation

Song, T. L., et al. Erratum: “Strain Relaxation Due to V-pit Formation in In[sub X]Ga[sub 1−x]N∕GaN Epilayers Grown on Sapphire” [J. Appl. Phys. 98, 084906 (2005)]. 2006.