Gas doping ratio effects on p-type hydrogenated nanocrystalline silicon thin films grown by hot-wire chemical vapor deposition
Hydrogenated nanocrystalline silicon (nc-Si:H) grown by hot-wire chemical vapor deposition (HWCVD) has recently drawn significant attention in the area of thin-film large area optoelectronics due to possibility of high deposition rate. We report on the effects of diborane (B(2)H(6)) doping ratio on...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Published: |
ELSEVIER SCIENCE BV
2008
|
| Subjects: | |
| Online Access: | http://shdl.mmu.edu.my/1943/ |
| _version_ | 1848789921049870336 |
|---|---|
| author | LUO, P ZHOU, Z CHAN, K TANG, D CUI, R DOU, X |
| author_facet | LUO, P ZHOU, Z CHAN, K TANG, D CUI, R DOU, X |
| author_sort | LUO, P |
| building | MMU Institutional Repository |
| collection | Online Access |
| description | Hydrogenated nanocrystalline silicon (nc-Si:H) grown by hot-wire chemical vapor deposition (HWCVD) has recently drawn significant attention in the area of thin-film large area optoelectronics due to possibility of high deposition rate. We report on the effects of diborane (B(2)H(6)) doping ratio on the microstructural and optoelectrical properties of the p-type nc-Si: H thin films grown by HWCVD at low substrate temperature of 200 degrees C and with high hydrogen dilution ratio of 98.8%. An attempt has been made to elucidate the boron doping mechanism of the p-type nc-Si:H thin films deposited by HWCVD and the correlation between the B(2)H(6) doping ratio, crystalline volume fraction, optical band gap and dark conductivity. (C) 2008 Elsevier B.V. All rights reserved. |
| first_indexed | 2025-11-14T18:04:23Z |
| format | Article |
| id | mmu-1943 |
| institution | Multimedia University |
| institution_category | Local University |
| last_indexed | 2025-11-14T18:04:23Z |
| publishDate | 2008 |
| publisher | ELSEVIER SCIENCE BV |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | mmu-19432011-09-23T03:56:59Z http://shdl.mmu.edu.my/1943/ Gas doping ratio effects on p-type hydrogenated nanocrystalline silicon thin films grown by hot-wire chemical vapor deposition LUO, P ZHOU, Z CHAN, K TANG, D CUI, R DOU, X TP Chemical technology TD Environmental technology. Sanitary engineering Hydrogenated nanocrystalline silicon (nc-Si:H) grown by hot-wire chemical vapor deposition (HWCVD) has recently drawn significant attention in the area of thin-film large area optoelectronics due to possibility of high deposition rate. We report on the effects of diborane (B(2)H(6)) doping ratio on the microstructural and optoelectrical properties of the p-type nc-Si: H thin films grown by HWCVD at low substrate temperature of 200 degrees C and with high hydrogen dilution ratio of 98.8%. An attempt has been made to elucidate the boron doping mechanism of the p-type nc-Si:H thin films deposited by HWCVD and the correlation between the B(2)H(6) doping ratio, crystalline volume fraction, optical band gap and dark conductivity. (C) 2008 Elsevier B.V. All rights reserved. ELSEVIER SCIENCE BV 2008-12 Article NonPeerReviewed LUO, P and ZHOU, Z and CHAN, K and TANG, D and CUI, R and DOU, X (2008) Gas doping ratio effects on p-type hydrogenated nanocrystalline silicon thin films grown by hot-wire chemical vapor deposition. Applied Surface Science, 255 (5). 2910-2915 . ISSN 01694332 http://dx.doi.org/10.1016/j.apsusc.2008.08.038 doi:10.1016/j.apsusc.2008.08.038 doi:10.1016/j.apsusc.2008.08.038 |
| spellingShingle | TP Chemical technology TD Environmental technology. Sanitary engineering LUO, P ZHOU, Z CHAN, K TANG, D CUI, R DOU, X Gas doping ratio effects on p-type hydrogenated nanocrystalline silicon thin films grown by hot-wire chemical vapor deposition |
| title | Gas doping ratio effects on p-type hydrogenated nanocrystalline silicon thin films grown by hot-wire chemical vapor deposition |
| title_full | Gas doping ratio effects on p-type hydrogenated nanocrystalline silicon thin films grown by hot-wire chemical vapor deposition |
| title_fullStr | Gas doping ratio effects on p-type hydrogenated nanocrystalline silicon thin films grown by hot-wire chemical vapor deposition |
| title_full_unstemmed | Gas doping ratio effects on p-type hydrogenated nanocrystalline silicon thin films grown by hot-wire chemical vapor deposition |
| title_short | Gas doping ratio effects on p-type hydrogenated nanocrystalline silicon thin films grown by hot-wire chemical vapor deposition |
| title_sort | gas doping ratio effects on p-type hydrogenated nanocrystalline silicon thin films grown by hot-wire chemical vapor deposition |
| topic | TP Chemical technology TD Environmental technology. Sanitary engineering |
| url | http://shdl.mmu.edu.my/1943/ http://shdl.mmu.edu.my/1943/ http://shdl.mmu.edu.my/1943/ |