Gas doping ratio effects on p-type hydrogenated nanocrystalline silicon thin films grown by hot-wire chemical vapor deposition
Hydrogenated nanocrystalline silicon (nc-Si:H) grown by hot-wire chemical vapor deposition (HWCVD) has recently drawn significant attention in the area of thin-film large area optoelectronics due to possibility of high deposition rate. We report on the effects of diborane (B(2)H(6)) doping ratio on...
| Main Authors: | , , , , , |
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| Format: | Article |
| Published: |
ELSEVIER SCIENCE BV
2008
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| Subjects: | |
| Online Access: | http://shdl.mmu.edu.my/1943/ |