Gas doping ratio effects on p-type hydrogenated nanocrystalline silicon thin films grown by hot-wire chemical vapor deposition
Hydrogenated nanocrystalline silicon (nc-Si:H) grown by hot-wire chemical vapor deposition (HWCVD) has recently drawn significant attention in the area of thin-film large area optoelectronics due to possibility of high deposition rate. We report on the effects of diborane (B(2)H(6)) doping ratio on...
| Main Authors: | , , , , , |
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| Format: | Article |
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ELSEVIER SCIENCE BV
2008
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| Subjects: | |
| Online Access: | http://shdl.mmu.edu.my/1943/ |
| Summary: | Hydrogenated nanocrystalline silicon (nc-Si:H) grown by hot-wire chemical vapor deposition (HWCVD) has recently drawn significant attention in the area of thin-film large area optoelectronics due to possibility of high deposition rate. We report on the effects of diborane (B(2)H(6)) doping ratio on the microstructural and optoelectrical properties of the p-type nc-Si: H thin films grown by HWCVD at low substrate temperature of 200 degrees C and with high hydrogen dilution ratio of 98.8%. An attempt has been made to elucidate the boron doping mechanism of the p-type nc-Si:H thin films deposited by HWCVD and the correlation between the B(2)H(6) doping ratio, crystalline volume fraction, optical band gap and dark conductivity. (C) 2008 Elsevier B.V. All rights reserved. |
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