Study on capacitance performance of gallium nitride (GaN) diodes in high dose electron irradiation

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Study on capacitance performance of gallium nitride (GaN) diodes in high dose electron irradiation

Impact of 2 MGy and 10 MGy electron irradiation on gallium nitride (GaN) light emitting diodes (LEDs) has been studied. The device was a commercial product (Manufacturer: Vishay) type of GaN Blue LEDs (TLHB5400). The capacitance-voltage (C-V) characteristics of pre- and post-irradiation were measure...

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Bibliographic Details
Main Authors:	Abdullah, Yusof, Hedzir, Anati Syahirah, Hasbullah, Nurul Fadzlin, Che Hak, Cik Rohaida
Format:	Proceeding Paper
Language:	English English English
Published:	American Institute of Physics Inc. 2019
Subjects:	TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
Online Access:	http://irep.iium.edu.my/72573/ http://irep.iium.edu.my/72573/19/72573_Study%20on%20capacitance%20performance%20of%20gallium.pdf http://irep.iium.edu.my/72573/2/72573_Study%20on%20capacitance%20performance_SCOPUS.pdf http://irep.iium.edu.my/72573/3/72573_Study%20on%20capacitance%20performance_WOS.pdf

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