Study on capacitance performance of gallium nitride (GaN) diodes in high dose electron irradiation
Impact of 2 MGy and 10 MGy electron irradiation on gallium nitride (GaN) light emitting diodes (LEDs) has been studied. The device was a commercial product (Manufacturer: Vishay) type of GaN Blue LEDs (TLHB5400). The capacitance-voltage (C-V) characteristics of pre- and post-irradiation were measure...
| Main Authors: | , , , |
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| Format: | Proceeding Paper |
| Language: | English English English |
| Published: |
American Institute of Physics Inc.
2019
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/72573/ http://irep.iium.edu.my/72573/19/72573_Study%20on%20capacitance%20performance%20of%20gallium.pdf http://irep.iium.edu.my/72573/2/72573_Study%20on%20capacitance%20performance_SCOPUS.pdf http://irep.iium.edu.my/72573/3/72573_Study%20on%20capacitance%20performance_WOS.pdf |
Internet
http://irep.iium.edu.my/72573/http://irep.iium.edu.my/72573/19/72573_Study%20on%20capacitance%20performance%20of%20gallium.pdf
http://irep.iium.edu.my/72573/2/72573_Study%20on%20capacitance%20performance_SCOPUS.pdf
http://irep.iium.edu.my/72573/3/72573_Study%20on%20capacitance%20performance_WOS.pdf