Study on capacitance performance of gallium nitride (GaN) diodes in high dose electron irradiation
Impact of 2 MGy and 10 MGy electron irradiation on gallium nitride (GaN) light emitting diodes (LEDs) has been studied. The device was a commercial product (Manufacturer: Vishay) type of GaN Blue LEDs (TLHB5400). The capacitance-voltage (C-V) characteristics of pre- and post-irradiation were measure...
| Main Authors: | , , , |
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| Format: | Proceeding Paper |
| Language: | English English English |
| Published: |
American Institute of Physics Inc.
2019
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| Online Access: | http://irep.iium.edu.my/72573/ http://irep.iium.edu.my/72573/19/72573_Study%20on%20capacitance%20performance%20of%20gallium.pdf http://irep.iium.edu.my/72573/2/72573_Study%20on%20capacitance%20performance_SCOPUS.pdf http://irep.iium.edu.my/72573/3/72573_Study%20on%20capacitance%20performance_WOS.pdf |
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| author | Abdullah, Yusof Hedzir, Anati Syahirah Hasbullah, Nurul Fadzlin Che Hak, Cik Rohaida |
| author_facet | Abdullah, Yusof Hedzir, Anati Syahirah Hasbullah, Nurul Fadzlin Che Hak, Cik Rohaida |
| author_sort | Abdullah, Yusof |
| building | IIUM Repository |
| collection | Online Access |
| description | Impact of 2 MGy and 10 MGy electron irradiation on gallium nitride (GaN) light emitting diodes (LEDs) has been studied. The device was a commercial product (Manufacturer: Vishay) type of GaN Blue LEDs (TLHB5400). The capacitance-voltage (C-V) characteristics of pre- and post-irradiation were measured. The result showed that the amount of capacitance and doping concentration decreases as the radiation dose increased. The deactivation of dopants atoms in the bulk increased due to higher irradiation dose hence increasing the radiation-induced defect which lead to the degradation of the device. |
| first_indexed | 2025-11-14T17:28:06Z |
| format | Proceeding Paper |
| id | iium-72573 |
| institution | International Islamic University Malaysia |
| institution_category | Local University |
| language | English English English |
| last_indexed | 2025-11-14T17:28:06Z |
| publishDate | 2019 |
| publisher | American Institute of Physics Inc. |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | iium-725732019-06-13T01:05:32Z http://irep.iium.edu.my/72573/ Study on capacitance performance of gallium nitride (GaN) diodes in high dose electron irradiation Abdullah, Yusof Hedzir, Anati Syahirah Hasbullah, Nurul Fadzlin Che Hak, Cik Rohaida TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices Impact of 2 MGy and 10 MGy electron irradiation on gallium nitride (GaN) light emitting diodes (LEDs) has been studied. The device was a commercial product (Manufacturer: Vishay) type of GaN Blue LEDs (TLHB5400). The capacitance-voltage (C-V) characteristics of pre- and post-irradiation were measured. The result showed that the amount of capacitance and doping concentration decreases as the radiation dose increased. The deactivation of dopants atoms in the bulk increased due to higher irradiation dose hence increasing the radiation-induced defect which lead to the degradation of the device. American Institute of Physics Inc. 2019 Proceeding Paper PeerReviewed application/pdf en http://irep.iium.edu.my/72573/19/72573_Study%20on%20capacitance%20performance%20of%20gallium.pdf application/pdf en http://irep.iium.edu.my/72573/2/72573_Study%20on%20capacitance%20performance_SCOPUS.pdf application/pdf en http://irep.iium.edu.my/72573/3/72573_Study%20on%20capacitance%20performance_WOS.pdf Abdullah, Yusof and Hedzir, Anati Syahirah and Hasbullah, Nurul Fadzlin and Che Hak, Cik Rohaida (2019) Study on capacitance performance of gallium nitride (GaN) diodes in high dose electron irradiation. In: International Conference on X-Rays and Related Techniques in Research and Industry 2018 (ICXRI 2018), 18th-19th August 2018, Kota Baharu, Kelantan. https://aip.scitation.org/doi/abs/10.1063/1.5089313?journalCode=apc 10.1063/1.5089313 |
| spellingShingle | TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices Abdullah, Yusof Hedzir, Anati Syahirah Hasbullah, Nurul Fadzlin Che Hak, Cik Rohaida Study on capacitance performance of gallium nitride (GaN) diodes in high dose electron irradiation |
| title | Study on capacitance performance of gallium nitride (GaN) diodes in high dose electron irradiation |
| title_full | Study on capacitance performance of gallium nitride (GaN) diodes in high dose electron irradiation |
| title_fullStr | Study on capacitance performance of gallium nitride (GaN) diodes in high dose electron irradiation |
| title_full_unstemmed | Study on capacitance performance of gallium nitride (GaN) diodes in high dose electron irradiation |
| title_short | Study on capacitance performance of gallium nitride (GaN) diodes in high dose electron irradiation |
| title_sort | study on capacitance performance of gallium nitride (gan) diodes in high dose electron irradiation |
| topic | TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices |
| url | http://irep.iium.edu.my/72573/ http://irep.iium.edu.my/72573/ http://irep.iium.edu.my/72573/ http://irep.iium.edu.my/72573/19/72573_Study%20on%20capacitance%20performance%20of%20gallium.pdf http://irep.iium.edu.my/72573/2/72573_Study%20on%20capacitance%20performance_SCOPUS.pdf http://irep.iium.edu.my/72573/3/72573_Study%20on%20capacitance%20performance_WOS.pdf |