Transition of electron transport process in Be-doped low-temperature-grown GaAs layer

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Transition of electron transport process in Be-doped low-temperature-grown GaAs layer

Effects of the structure change of antisite-As (AsGa) defects on the electron transport property in Be-doped low-temperature-grown GaAs layers were investigated. In this material AsGa atoms cooperatively change their positions between substitutional and interstitial sites. We found an abrupt change...

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Bibliographic Details
Main Authors:	Mohamed, Mohd Ambri, Otsuka, Nobuo, Pham, Tien Lam
Format:	Article
Language:	English
Published:	American Institute of Physics 2013
Subjects:	QC Physics TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://irep.iium.edu.my/31780/ http://irep.iium.edu.my/31780/2/JAP2013-.pdf

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