Effect of modulation p-doping on the optical properties of quantum dot laser structure
Temperature dependence electroluminescence (EL) measurements have been performed on In(Ga)As/ GaAs quantum dot (QD) structures with varying amounts of modulation p-doping. It is found that the IEL decreases with increasing temperature with the size of reduction decreases with increasing doping lev...
| Main Authors: | , , |
|---|---|
| Format: | Proceeding Paper |
| Language: | English |
| Published: |
2010
|
| Subjects: | |
| Online Access: | http://irep.iium.edu.my/1477/ http://irep.iium.edu.my/1477/1/PERFIKNFH-revised.pdf |
| _version_ | 1848775863339843584 |
|---|---|
| author | Hasbullah, Nurul Fadzlin David, J. P. R. Mowbray, D. J. |
| author_facet | Hasbullah, Nurul Fadzlin David, J. P. R. Mowbray, D. J. |
| author_sort | Hasbullah, Nurul Fadzlin |
| building | IIUM Repository |
| collection | Online Access |
| description | Temperature dependence electroluminescence (EL) measurements have been performed on In(Ga)As/ GaAs
quantum dot (QD) structures with varying amounts of modulation p-doping. It is found that the IEL decreases with
increasing temperature with the size of reduction decreases with increasing doping level. Activation energies derived
from the temperature dependence results shows that the values increases with increasing doping. This is attributed to an increased Coulombic attraction between the extrinsic holes and injected electrons.
|
| first_indexed | 2025-11-14T14:20:57Z |
| format | Proceeding Paper |
| id | iium-1477 |
| institution | International Islamic University Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-14T14:20:57Z |
| publishDate | 2010 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | iium-14772012-02-28T03:07:05Z http://irep.iium.edu.my/1477/ Effect of modulation p-doping on the optical properties of quantum dot laser structure Hasbullah, Nurul Fadzlin David, J. P. R. Mowbray, D. J. TK7885 Computer engineering Temperature dependence electroluminescence (EL) measurements have been performed on In(Ga)As/ GaAs quantum dot (QD) structures with varying amounts of modulation p-doping. It is found that the IEL decreases with increasing temperature with the size of reduction decreases with increasing doping level. Activation energies derived from the temperature dependence results shows that the values increases with increasing doping. This is attributed to an increased Coulombic attraction between the extrinsic holes and injected electrons. 2010 Proceeding Paper PeerReviewed application/pdf en http://irep.iium.edu.my/1477/1/PERFIKNFH-revised.pdf Hasbullah, Nurul Fadzlin and David, J. P. R. and Mowbray, D. J. (2010) Effect of modulation p-doping on the optical properties of quantum dot laser structure. In: 2010 Malaysia National Conference on Physics (PERFIK 2010), 27-30 October, 2010, Lumut, Perak, Malaysia. http://fet.mmu.edu.my/perfik2010/ doi:10.1063/1.3573710 |
| spellingShingle | TK7885 Computer engineering Hasbullah, Nurul Fadzlin David, J. P. R. Mowbray, D. J. Effect of modulation p-doping on the optical properties of quantum dot laser structure |
| title | Effect of modulation p-doping on the optical properties of quantum dot laser structure |
| title_full | Effect of modulation p-doping on the optical properties of quantum dot laser structure |
| title_fullStr | Effect of modulation p-doping on the optical properties of quantum dot laser structure |
| title_full_unstemmed | Effect of modulation p-doping on the optical properties of quantum dot laser structure |
| title_short | Effect of modulation p-doping on the optical properties of quantum dot laser structure |
| title_sort | effect of modulation p-doping on the optical properties of quantum dot laser structure |
| topic | TK7885 Computer engineering |
| url | http://irep.iium.edu.my/1477/ http://irep.iium.edu.my/1477/ http://irep.iium.edu.my/1477/ http://irep.iium.edu.my/1477/1/PERFIKNFH-revised.pdf |