Reduced graphene oxide-silicon interface involving direct Si-O bonding as a conductive and mechanical stable ohmic contact
Metal-semiconductor junctions are essential contacts for semiconductor devices, but high contact junction resistance is a limiting operational factor. Here, we establish an ohmic contact of low resistance of <4 × 10−6Ω cm2between platinum and n-type Si (111)-H surfaces. This involved Si-O covalen...
| Main Authors: | , , , , , , , |
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| Format: | Journal Article |
| Language: | English |
| Published: |
ROYAL SOC CHEMISTRY
2020
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| Subjects: | |
| Online Access: | http://purl.org/au-research/grants/arc/DP190100735 http://hdl.handle.net/20.500.11937/93929 |
| _version_ | 1848765813468692480 |
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| author | Rahpeima, Soraya Dief, Essam Peiris, Chandramalika Ferrie, Stuart Duan, A. Ciampi, Simone Raston, C.L. Darwish, Nadim |
| author_facet | Rahpeima, Soraya Dief, Essam Peiris, Chandramalika Ferrie, Stuart Duan, A. Ciampi, Simone Raston, C.L. Darwish, Nadim |
| author_sort | Rahpeima, Soraya |
| building | Curtin Institutional Repository |
| collection | Online Access |
| description | Metal-semiconductor junctions are essential contacts for semiconductor devices, but high contact junction resistance is a limiting operational factor. Here, we establish an ohmic contact of low resistance of <4 × 10−6Ω cm2between platinum and n-type Si (111)-H surfaces. This involved Si-O covalent bonding a monolayer of graphene oxide (GO) to the Si surface followed by electrochemical reduction to form reduced graphene oxide (rGO). Current-voltage plots demonstrate that the GO/rGO transformation is associated with a change from a rectifying to an ohmic contact. The process is a viable method for constructing semiconductor-rGO interfaces and demonstrates that GO/rGO monolayers can be used as active components in tuning the contact resistance of metal-semiconductor junctions. |
| first_indexed | 2025-11-14T11:41:13Z |
| format | Journal Article |
| id | curtin-20.500.11937-93929 |
| institution | Curtin University Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-14T11:41:13Z |
| publishDate | 2020 |
| publisher | ROYAL SOC CHEMISTRY |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | curtin-20.500.11937-939292024-01-18T03:46:04Z Reduced graphene oxide-silicon interface involving direct Si-O bonding as a conductive and mechanical stable ohmic contact Rahpeima, Soraya Dief, Essam Peiris, Chandramalika Ferrie, Stuart Duan, A. Ciampi, Simone Raston, C.L. Darwish, Nadim Science & Technology Physical Sciences Chemistry, Multidisciplinary Chemistry SEMICONDUCTOR SCHOTTKY Metal-semiconductor junctions are essential contacts for semiconductor devices, but high contact junction resistance is a limiting operational factor. Here, we establish an ohmic contact of low resistance of <4 × 10−6Ω cm2between platinum and n-type Si (111)-H surfaces. This involved Si-O covalent bonding a monolayer of graphene oxide (GO) to the Si surface followed by electrochemical reduction to form reduced graphene oxide (rGO). Current-voltage plots demonstrate that the GO/rGO transformation is associated with a change from a rectifying to an ohmic contact. The process is a viable method for constructing semiconductor-rGO interfaces and demonstrates that GO/rGO monolayers can be used as active components in tuning the contact resistance of metal-semiconductor junctions. 2020 Journal Article http://hdl.handle.net/20.500.11937/93929 10.1039/d0cc02310h English http://purl.org/au-research/grants/arc/DP190100735 http://purl.org/au-research/grants/arc/DE160101101 http://purl.org/au-research/grants/arc/DE160100732 http://purl.org/au-research/grants/arc/DP170100450 ROYAL SOC CHEMISTRY fulltext |
| spellingShingle | Science & Technology Physical Sciences Chemistry, Multidisciplinary Chemistry SEMICONDUCTOR SCHOTTKY Rahpeima, Soraya Dief, Essam Peiris, Chandramalika Ferrie, Stuart Duan, A. Ciampi, Simone Raston, C.L. Darwish, Nadim Reduced graphene oxide-silicon interface involving direct Si-O bonding as a conductive and mechanical stable ohmic contact |
| title | Reduced graphene oxide-silicon interface involving direct Si-O bonding as a conductive and mechanical stable ohmic contact |
| title_full | Reduced graphene oxide-silicon interface involving direct Si-O bonding as a conductive and mechanical stable ohmic contact |
| title_fullStr | Reduced graphene oxide-silicon interface involving direct Si-O bonding as a conductive and mechanical stable ohmic contact |
| title_full_unstemmed | Reduced graphene oxide-silicon interface involving direct Si-O bonding as a conductive and mechanical stable ohmic contact |
| title_short | Reduced graphene oxide-silicon interface involving direct Si-O bonding as a conductive and mechanical stable ohmic contact |
| title_sort | reduced graphene oxide-silicon interface involving direct si-o bonding as a conductive and mechanical stable ohmic contact |
| topic | Science & Technology Physical Sciences Chemistry, Multidisciplinary Chemistry SEMICONDUCTOR SCHOTTKY |
| url | http://purl.org/au-research/grants/arc/DP190100735 http://purl.org/au-research/grants/arc/DP190100735 http://purl.org/au-research/grants/arc/DP190100735 http://purl.org/au-research/grants/arc/DP190100735 http://hdl.handle.net/20.500.11937/93929 |