Reduced graphene oxide-silicon interface involving direct Si-O bonding as a conductive and mechanical stable ohmic contact

Reduced graphene oxide-silicon interface involving direct Si-O bonding as a conductive and mechanical stable ohmic contact

Metal-semiconductor junctions are essential contacts for semiconductor devices, but high contact junction resistance is a limiting operational factor. Here, we establish an ohmic contact of low resistance of <4 × 10−6Ω cm2between platinum and n-type Si (111)-H surfaces. This involved Si-O covalen...

Full description

Bibliographic Details
Main Authors: Rahpeima, Soraya, Dief, Essam, Peiris, Chandramalika, Ferrie, Stuart, Duan, A., Ciampi, Simone, Raston, C.L., Darwish, Nadim
Format: Journal Article
Language:English
Published: ROYAL SOC CHEMISTRY 2020
Subjects:
Science & Technology
Physical Sciences
Chemistry, Multidisciplinary
Chemistry
SEMICONDUCTOR
SCHOTTKY
Online Access:http://purl.org/au-research/grants/arc/DP190100735
http://hdl.handle.net/20.500.11937/93929

Internet

http://purl.org/au-research/grants/arc/DP190100735
http://hdl.handle.net/20.500.11937/93929

Similar Items