Single Phosphorus Atoms in Si(001): Doping-Induced Charge Transfer into Isolated Si Dangling Bonds

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Single Phosphorus Atoms in Si(001): Doping-Induced Charge Transfer into Isolated Si Dangling Bonds

Bibliographic Details
Main Authors:	Reusch, T., Radny, M., Smith, P., Warschkow, O., Marks, Nigel, Curson, N., McKenzie, D., Simmons, M.
Format:	Journal Article
Published:	American Chemical Society 2007
Online Access:	http://hdl.handle.net/20.500.11937/8440

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