Single Phosphorus Atoms in Si(001): Doping-Induced Charge Transfer into Isolated Si Dangling Bonds

Single Phosphorus Atoms in Si(001): Doping-Induced Charge Transfer into Isolated Si Dangling Bonds

Bibliographic Details
Main Authors: Reusch, T., Radny, M., Smith, P., Warschkow, O., Marks, Nigel, Curson, N., McKenzie, D., Simmons, M.
Format: Journal Article
Published: American Chemical Society 2007
Online Access:http://hdl.handle.net/20.500.11937/8440

Internet

http://hdl.handle.net/20.500.11937/8440

Similar Items