APA (7th ed.) Citation

Reusch, T., Radny, M., Smith, P., Warschkow, O., Marks, N., Curson, N., . . . Simmons, M. (2007). Single Phosphorus Atoms in Si(001): Doping-Induced Charge Transfer into Isolated Si Dangling Bonds. American Chemical Society.

Chicago Style (17th ed.) Citation

Reusch, T., M. Radny, P. Smith, O. Warschkow, Nigel Marks, N. Curson, D. McKenzie, and M. Simmons. Single Phosphorus Atoms in Si(001): Doping-Induced Charge Transfer into Isolated Si Dangling Bonds. American Chemical Society, 2007.

MLA (9th ed.) Citation

Reusch, T., et al. Single Phosphorus Atoms in Si(001): Doping-Induced Charge Transfer into Isolated Si Dangling Bonds. American Chemical Society, 2007.