Stress control of porous silicon film for microelectromechanical systems

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Stress control of porous silicon film for microelectromechanical systems

Control of stress in porous silicon (PS) through porosity changes was studied using X-ray diffraction rocking curve measurements. The effect of thermal annealing on the stress was also investigated, which showed the ability to achieve compressive or tensile films in a reversible manner. The effect o...

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Bibliographic Details
Main Authors:	Sun, Xiao, Keating, Adrian, Parish, Giacinta
Other Authors:	Faraone, L
Format:	Conference Paper
Language:	English
Published:	IEEE 2014
Subjects:	Science & Technology Technology Physical Sciences Engineering, Electrical & Electronic Nanoscience & Nanotechnology Optics Engineering Science & Technology - Other Topics Porous silicon stress X-ray diffraction annealing resonant frequency X-RAY-DIFFRACTION
Online Access:	http://hdl.handle.net/20.500.11937/80013

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