Stress control of porous silicon film for microelectromechanical systems

Stress control of porous silicon film for microelectromechanical systems

Control of stress in porous silicon (PS) through porosity changes was studied using X-ray diffraction rocking curve measurements. The effect of thermal annealing on the stress was also investigated, which showed the ability to achieve compressive or tensile films in a reversible manner. The effect o...

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Bibliographic Details
Main Authors: Sun, Xiao, Keating, Adrian, Parish, Giacinta
Other Authors: Faraone, L
Format: Conference Paper
Language:English
Published: IEEE 2014
Subjects:
Science & Technology
Technology
Physical Sciences
Engineering, Electrical & Electronic
Nanoscience & Nanotechnology
Optics
Engineering
Science & Technology - Other Topics
Porous silicon
stress
X-ray diffraction
annealing
resonant frequency
X-RAY-DIFFRACTION
Online Access:http://hdl.handle.net/20.500.11937/80013

Internet

http://hdl.handle.net/20.500.11937/80013

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