Stress control of porous silicon film for microelectromechanical systems
Control of stress in porous silicon (PS) through porosity changes was studied using X-ray diffraction rocking curve measurements. The effect of thermal annealing on the stress was also investigated, which showed the ability to achieve compressive or tensile films in a reversible manner. The effect o...
| Main Authors: | , , |
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| Other Authors: | |
| Format: | Conference Paper |
| Language: | English |
| Published: |
IEEE
2014
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| Subjects: | |
| Online Access: | http://hdl.handle.net/20.500.11937/80013 |
| _version_ | 1848764141793181696 |
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| author | Sun, Xiao Keating, Adrian Parish, Giacinta |
| author2 | Faraone, L |
| author_facet | Faraone, L Sun, Xiao Keating, Adrian Parish, Giacinta |
| author_sort | Sun, Xiao |
| building | Curtin Institutional Repository |
| collection | Online Access |
| description | Control of stress in porous silicon (PS) through porosity changes was studied using X-ray diffraction rocking curve measurements. The effect of thermal annealing on the stress was also investigated, which showed the ability to achieve compressive or tensile films in a reversible manner. The effect of stress on the resonant frequency of PS microbeams was studied to understand the impact of PS film stress when used as the structural layer in a microelectromechanical systems sensor. The results indicated that stress is a significant factor in determining resonant frequency, shifting it by up to a factor of 3.6 from the zero stress state, illustrating the need for accurate control. |
| first_indexed | 2025-11-14T11:14:39Z |
| format | Conference Paper |
| id | curtin-20.500.11937-80013 |
| institution | Curtin University Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-14T11:14:39Z |
| publishDate | 2014 |
| publisher | IEEE |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | curtin-20.500.11937-800132021-01-04T05:32:50Z Stress control of porous silicon film for microelectromechanical systems Sun, Xiao Keating, Adrian Parish, Giacinta Faraone, L Martyniuk, M Science & Technology Technology Physical Sciences Engineering, Electrical & Electronic Nanoscience & Nanotechnology Optics Engineering Science & Technology - Other Topics Porous silicon stress X-ray diffraction annealing resonant frequency X-RAY-DIFFRACTION Control of stress in porous silicon (PS) through porosity changes was studied using X-ray diffraction rocking curve measurements. The effect of thermal annealing on the stress was also investigated, which showed the ability to achieve compressive or tensile films in a reversible manner. The effect of stress on the resonant frequency of PS microbeams was studied to understand the impact of PS film stress when used as the structural layer in a microelectromechanical systems sensor. The results indicated that stress is a significant factor in determining resonant frequency, shifting it by up to a factor of 3.6 from the zero stress state, illustrating the need for accurate control. 2014 Conference Paper http://hdl.handle.net/20.500.11937/80013 10.1109/COMMAD.2014.7038693 English IEEE restricted |
| spellingShingle | Science & Technology Technology Physical Sciences Engineering, Electrical & Electronic Nanoscience & Nanotechnology Optics Engineering Science & Technology - Other Topics Porous silicon stress X-ray diffraction annealing resonant frequency X-RAY-DIFFRACTION Sun, Xiao Keating, Adrian Parish, Giacinta Stress control of porous silicon film for microelectromechanical systems |
| title | Stress control of porous silicon film for microelectromechanical systems |
| title_full | Stress control of porous silicon film for microelectromechanical systems |
| title_fullStr | Stress control of porous silicon film for microelectromechanical systems |
| title_full_unstemmed | Stress control of porous silicon film for microelectromechanical systems |
| title_short | Stress control of porous silicon film for microelectromechanical systems |
| title_sort | stress control of porous silicon film for microelectromechanical systems |
| topic | Science & Technology Technology Physical Sciences Engineering, Electrical & Electronic Nanoscience & Nanotechnology Optics Engineering Science & Technology - Other Topics Porous silicon stress X-ray diffraction annealing resonant frequency X-RAY-DIFFRACTION |
| url | http://hdl.handle.net/20.500.11937/80013 |