Stress control of porous silicon films for microelectromechanical systems

© 2015 Elsevier Inc. All rights reserved. Control of stress in porous silicon (PS) through porosity changes was studied using X-ray diffraction rocking curve measurements. The effect of thermal annealing on the stress was also investigated with both X-ray diffraction and radius of curvature meas...

Full description

Bibliographic Details
Main Authors: Sun, Xiao, Keating, Adrian, Parish, Giacinta
Format: Journal Article
Published: Elsevier 2015
Online Access:http://hdl.handle.net/20.500.11937/79813