Fabrication of uniform porosity, all-porous-silicon microstructures and stress/stress gradient control

All-mesoporous silicon microstructures were released with standard micromachining processes. The extremely high porosity of the films allows control of the mechanical properties as well as providing a platform material for devices with extremely large surface area. To pattern and release devices fro...

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Main Authors: Sun, Xiao, Parish, Giacinta, Keating, Adrian
Format: Journal Article
Published: IOP Publishing 2017
Online Access:http://hdl.handle.net/20.500.11937/79812
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author Sun, Xiao
Parish, Giacinta
Keating, Adrian
author_facet Sun, Xiao
Parish, Giacinta
Keating, Adrian
author_sort Sun, Xiao
building Curtin Institutional Repository
collection Online Access
description All-mesoporous silicon microstructures were released with standard micromachining processes. The extremely high porosity of the films allows control of the mechanical properties as well as providing a platform material for devices with extremely large surface area. To pattern and release devices from these highly porous structural layers, pore filling, photoresist mask adhesion and electropolishing techniques were developed. The internal stress of porous silicon was characterized under repeated thermal annealing and HF immersion treatments, allowing a stable, slightly tensile stress of 2.0  ±  0.4 MPa to be achieved. A method to independently control the stress gradient induced curvature in the porous MEMS devices was developed, which achieved released PS structures that were flat to within 78 nm over a range of 100 µm. This is the first time that fully released, stress gradient adjusted all-mesoporous-silicon structures have been reported.
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format Journal Article
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institution Curtin University Malaysia
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last_indexed 2025-11-14T11:14:07Z
publishDate 2017
publisher IOP Publishing
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spelling curtin-20.500.11937-798122020-08-07T02:51:13Z Fabrication of uniform porosity, all-porous-silicon microstructures and stress/stress gradient control Sun, Xiao Parish, Giacinta Keating, Adrian All-mesoporous silicon microstructures were released with standard micromachining processes. The extremely high porosity of the films allows control of the mechanical properties as well as providing a platform material for devices with extremely large surface area. To pattern and release devices from these highly porous structural layers, pore filling, photoresist mask adhesion and electropolishing techniques were developed. The internal stress of porous silicon was characterized under repeated thermal annealing and HF immersion treatments, allowing a stable, slightly tensile stress of 2.0  ±  0.4 MPa to be achieved. A method to independently control the stress gradient induced curvature in the porous MEMS devices was developed, which achieved released PS structures that were flat to within 78 nm over a range of 100 µm. This is the first time that fully released, stress gradient adjusted all-mesoporous-silicon structures have been reported. 2017 Journal Article http://hdl.handle.net/20.500.11937/79812 10.1088/1361-6439/aa556c IOP Publishing restricted
spellingShingle Sun, Xiao
Parish, Giacinta
Keating, Adrian
Fabrication of uniform porosity, all-porous-silicon microstructures and stress/stress gradient control
title Fabrication of uniform porosity, all-porous-silicon microstructures and stress/stress gradient control
title_full Fabrication of uniform porosity, all-porous-silicon microstructures and stress/stress gradient control
title_fullStr Fabrication of uniform porosity, all-porous-silicon microstructures and stress/stress gradient control
title_full_unstemmed Fabrication of uniform porosity, all-porous-silicon microstructures and stress/stress gradient control
title_short Fabrication of uniform porosity, all-porous-silicon microstructures and stress/stress gradient control
title_sort fabrication of uniform porosity, all-porous-silicon microstructures and stress/stress gradient control
url http://hdl.handle.net/20.500.11937/79812