Anisotropic electromechanical properties of GaN ceramics caused by polarisation

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Anisotropic electromechanical properties of GaN ceramics caused by polarisation

Based on three-point bending tests and finite element modelling, effects of polarisation directions are investigated on the mechanical and electrical properties of GaN piezoelectric semiconductor ceramics (PSCs). It is shown that polarisation leads to anisotropic electromechanical properties of PSCs...

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Bibliographic Details
Main Authors:	Qin, G.S., Lu, Chunsheng, Umair, M., Zhao, M.H.
Format:	Journal Article
Language:	English
Published:	ELSEVIER SCI LTD 2020
Subjects:	Science & Technology Technology Materials Science, Ceramics Materials Science Piezoelectric semiconductor ceramics Polarisation direction Anisotropy Electromechanical properties GaN LEAD-ZIRCONATE-TITANATE FRACTURE-TOUGHNESS PIEZOELECTRIC SEMICONDUCTOR ELECTRIC-FIELD DEEP NOTCHES STRENGTH CRACK BEHAVIOR PZT
Online Access:	http://hdl.handle.net/20.500.11937/78293

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