Anisotropic electromechanical properties of GaN ceramics caused by polarisation

Anisotropic electromechanical properties of GaN ceramics caused by polarisation

Based on three-point bending tests and finite element modelling, effects of polarisation directions are investigated on the mechanical and electrical properties of GaN piezoelectric semiconductor ceramics (PSCs). It is shown that polarisation leads to anisotropic electromechanical properties of PSCs...

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Bibliographic Details
Main Authors: Qin, G.S., Lu, Chunsheng, Umair, M., Zhao, M.H.
Format: Journal Article
Language:English
Published: ELSEVIER SCI LTD 2020
Subjects:
Science & Technology
Technology
Materials Science, Ceramics
Materials Science
Piezoelectric semiconductor ceramics
Polarisation direction
Anisotropy
Electromechanical properties
GaN
LEAD-ZIRCONATE-TITANATE
FRACTURE-TOUGHNESS
PIEZOELECTRIC SEMICONDUCTOR
ELECTRIC-FIELD
DEEP NOTCHES
STRENGTH
CRACK
BEHAVIOR
PZT
Online Access:http://hdl.handle.net/20.500.11937/78293

Internet

http://hdl.handle.net/20.500.11937/78293

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